Process for producing light emitting device
US6399408B1 · kind B1 · utility
0Cited by
2References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 15, 2001 |
| Grant date | Jun 4, 2002 |
| Priority date | — |
| Expiry date | Feb 15, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01
Abstract
The present invention provides a process for effectively producing a high performance light emitting device. A substrate on which an N-type semiconductor layer, a light emitting layer, and a P-type semiconductor layer are formed is provided. The N-type semiconductor layer is cut to be discontinuous. Then the substrate is microwaved. Not only the present invention takes advantage of microwaving process for producing a high performance light emitting device, but also avoids the shortcoming of the device cracking due to over activation of the N-type semiconductor layer by microwave processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.