Charng-Shyang Jong
7Patents
4h-index
14Co-inventors
46Inventor score
Filing activity: Jun 3, 1999 → May 16, 2007
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6380564B1 | Semiconductor light emitting device | Electricity | 36 | Expired |
| US6489250B1 | Method for cutting group III nitride semiconductor light emitting element | Electricity | 16 | Expired |
| US6693306B2 | Structure of a light emitting diode and method of making the same | Electricity | 16 | Expired |
| US6319808A | Ohmic contact to semiconductor devices and method of manufacturing the same | Electricity | 8 | Expired |
| US8097476B2 | Light emitting diode and wafer level package method, wafer level bonding method thereof, and circuit structure for wafer level package | Electricity | 1 | Active |
| US7061110B2 | Ohmic contact to semiconductor devices and method of manufacturing the same | Electricity | 0 | Expired |
| US6399408B1 | Process for producing light emitting device | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.