Self aligned gated Schottky diode guard ring structures
US6399413B1 · kind B1 · utility
13Cited by
2References
5Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 18, 2000 |
| Grant date | Jun 4, 2002 |
| Priority date | — |
| Expiry date | Apr 18, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D8/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The specification describes a Schottky barrier device with a distributed guard ring where the guard ring is spaced from the barrier by an MOS gate so that the guard ring and barrier are connected at low bias by an inversion layer. According to the invention, the MOS gate is used to precisely space the guard ring from the Schottky barrier.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.