Thomas J. Krutsick
19Patents
5h-index
12Co-inventors
59Inventor score
Filing activity: Mar 19, 1999 → Sep 15, 2010
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6066884A | Schottky diode guard ring structures | Electricity | 51 | Expired |
| US6767797B2 | Method of fabricating complementary self-aligned bipolar transistors | Electricity | 13 | Expired |
| US6399413B1 | Self aligned gated Schottky diode guard ring structures | Electricity | 13 | Expired |
| US6727567B2 | Integrated circuit device substrates with selective epitaxial growth thickness compensation | Electricity | 10 | Expired |
| US8542848B1 | Musical instrument preamplifier | Physics | 7 | Active |
| US6790753B2 | Field plated schottky diode and method of fabrication therefor | Electricity | 4 | Expired |
| US8269265B2 | Trench capacitor for high voltage processes and method of manufacturing the same | Electricity | 4 | Active |
| US7715162B2 | Optically triggered electro-static discharge protection circuit | Electricity | 3 | Active |
| US6555852B1 | Bipolar transistor having an emitter comprised of a semi-insulating material | Electricity | 2 | Expired |
| US6828649B2 | Semiconductor device having an interconnect that electrically connects a conductive material and a doped layer, and a method of manufacture therefor | Electricity | 2 | Expired |
| US6690037B1 | Field plated Schottky diode | Electricity | 2 | Expired |
| US7605010B1 | Integrated silicon optical isolator | Electricity | 2 | Active |
| US6409829B1 | Manufacture of dielectrically isolated integrated circuits | Electricity | 2 | Expired |
| US7439146B1 | Field plated resistor with enhanced routing area thereover | Electricity | 1 | Expired |
| US6737311B2 | Semiconductor device having a buried layer for reducing latchup and a method of manufacture therefor | Electricity | 1 | Expired |
| US7821016B2 | Light activated silicon controlled switch | Electricity | 1 | Active |
| US6458669B1 | Method of manufacturing an integrated circuit | Electricity | 0 | Expired |
| US8012775B2 | Method of forming a light activated silicon controlled switch | Electricity | 0 | Active |
| US8035196B2 | Methods of counter-doping collector regions in bipolar transistors | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.