Method of producing dynamic random access memory (DRAM) cell with folded bitline vertical transistor

US6399447B1 · kind B1 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Lawrence A. Clevenger · Saratoga Springs, US
• Louis L. Hsu · Fishkill, US
• Jack A. Mandelman · Stormville, US
• Carl Radens · Lagrangeville, US

Key dates

• Filing date: Jul 19, 2000
• Grant date: Jun 4, 2002
• Expiry date: Jul 19, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/488

Abstract

A semiconductor device and a method for forming the semiconductor device, include forming a mandrel, forming spacer wordline conductors on sidewalls of the mandrel, separating, by using a trim mask, adjacent spacer wordline conductors, and providing a contact area to contact alternating ones of pairs of the spacer wordline conductors.