Highly conformal titanium nitride deposition process for high aspect ratio structures
US6399490B1 · kind B1 · utility
64Cited by
13References
22Claims
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Key dates
| Filing date | Jun 29, 2000 |
| Grant date | Jun 4, 2002 |
| Priority date | — |
| Expiry date | Jun 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Process for forming highly conformal titanium nitride on a silicon substrate. A gaseous reaction mixture of titanium tetrachloride and ammonia is passed over the semiconductor substrate surface maintained at a temperature of about 350° C. to about 800° C. The ratio of titanium tetrachloride to ammonia is about 5:1 to 20:1. The high degree of conformality achieved by the process of the invention allows TiN layers to be deposited on structures with high aspect ratios and on complicated, three-dimensional structures without forming a large seam or void.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.