Uwe Schroeder
58Patents
13h-index
91Co-inventors
87Inventor score
Filing activity: Jul 26, 1996 → May 23, 2017
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6399490B1 | Highly conformal titanium nitride deposition process for high aspect ratio structures | Electricity | 64 | Expired |
| US6498061B2 | Negative ion implant mask formation for self-aligned, sublithographic resolution patterning for single-sided vertical device formation | Electricity | 42 | Expired |
| US6451662B1 | Method of forming low-leakage on-chip capacitor | Electricity | 35 | Expired |
| US6426253B1 | Method of forming a vertically oriented device in an integrated circuit | Electricity | 22 | Expired |
| US6403423B1 | Modified gate processing for optimized definition of array and logic devices on same chip | Electricity | 21 | Expired |
| US6540938B1 | Liquid crystalline light-modulating device | Physics | 20 | Expired |
| US6548357B2 | Modified gate processing for optimized definition of array and logic devices on same chip | Electricity | 19 | Expired |
| US6576550B1 | ‘Via first’ dual damascene process for copper metallization | Electricity | 19 | Expired |
| US6379869B1 | Method of improving the etch resistance of chemically amplified photoresists by introducing silicon after patterning | Physics | 18 | Expired |
| US6605838B1 | Process flow for thick isolation collar with reduced length | Electricity | 17 | Expired |
| US6620724B1 | Low resistivity deep trench fill for DRAM and EDRAM applications | Electricity | 16 | Expired |
| US7723771B2 | Zirconium oxide based capacitor and process to manufacture the same | Electricity | 16 | Active |
| US6599798B2 | Method of preparing buried LOCOS collar in trench DRAMS | Electricity | 14 | Expired |
| US7666752B2 | Deposition method for a transition-metal-containing dielectric | Electricity | 12 | Active |
| US9547741B2 | Methods, apparatus, and system for using filler cells in design of integrated circuit devices | Electricity | 11 | Active |
| US6335247B1 | Integrated circuit vertical trench device and method of forming thereof | Electricity | 11 | Expired |
| US6897943B2 | Method and apparatus for aerial image improvement in projection lithography using a phase shifting aperture | Physics | 10 | Expired |
| US6486024B1 | Integrated circuit trench device with a dielectric collar stack, and method of forming thereof | Electricity | 9 | Expired |
| US6316168A | Top layer imaging lithography for semiconductor processing | Emerging Cross-Sectional Technologies | 9 | Expired |
| US9437420B2 | Capacitors including amorphous dielectric layers and methods of forming the same | Electricity | 8 | Active |
| US7985676B2 | Method of making a contact in a semiconductor device | Electricity | 7 | Active |
| US6740555B1 | Semiconductor structures and manufacturing methods | Emerging Cross-Sectional Technologies | 7 | Expired |
| US6740595B2 | Etch process for recessing polysilicon in trench structures | Electricity | 7 | Expired |
| US9245087B1 | Methods, apparatus and system for reduction of power consumption in a semiconductor device | Electricity | 6 | Active |
| US7224030B2 | Method and apparatus for producing rectangular contact holes utilizing side lobe formation | Physics | 6 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.