Illumination system, particularly for EUV lithography

US6400794B1 · kind B1 · utility

Assignee

• Carl Zeiss Stiftung · DE

Inventors

• Jorg Schultz · Aalen, DE
• Johannes Wangler · Oberkochen, DE

Key dates

• Filing date: Nov 3, 2000
• Grant date: Jun 4, 2002
• Expiry date: Nov 3, 2020

Classification

• Technology area (CPC G): Physics
• CPC primary: G21K2201/06
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

The invention concerns an illumination system for wavelengths (193 nm, particularly for EUV lithography with at least one light source, which has an illumination A in one surface;at least one device for producing secondary light sources;at least one mirror or lens device, comprising at least one mirror or one lens, which is (are) divided into raster elements; one or more optical elements, which are arranged between the mirror or lens device that comprises at least one mirror or one lens, which is (are) divided into raster elements, and the reticle plane, wherein the optical elements image the secondary light sources in the exit pupil of the illumination system.The illumination system is characterized by the fact that the light source is a light source for producing radiation with a wavelength ≦193 nm, which irradiates in a well-defined plane with a wavelength spectrum, wherein the range of wavelengths used for the application, particularly for lithography, has a beam divergence perpendicular to this plane that is smaller than 5 mrads.