Simple means for measuring the offset induced by photo-conductive FETs in a solid state X-ray detector
US6400798B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2000 |
| Grant date | Jun 4, 2002 |
| Priority date | — |
| Expiry date | Aug 1, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01T1/20184
- WIPO fieldEnvironmental technology
- WIPO sectorChemistry
Abstract
A preferred embodiment of the present invention provides a method and apparatus for correcting the offset induced by Field Effect Transistor (FET) photo-conductive effects in a solid state X-ray detector. The method and apparatus include reading out twice as many rows (scan lines) as actually exist in the X-ray detector. The additional rows may be read out between the actuation of “real” scan lines on the X-ray detector. The additional row times may be used to measure the “signal” induced by FET photo-conductivity. In a preferred embodiment, the “real” rows may be actuated during odd lines, and even lines will be used to measure the signal induced by FET photo-conductivity. To correct for the offset induced by photo-conductive FETs, an even row signal may be subtracted from the preceding odd row signal. The correction for the offset induced by photo-conductive FETs may occur in addition to normal offset correction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.