Chemical mechanical polishing apparatus and method of washing contaminants off of the polishing head thereof
US6402598B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2000 |
| Grant date | Jun 11, 2002 |
| Priority date | — |
| Expiry date | Jun 29, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67051
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A chemical mechanical polishing (CMP) apparatus for planarizing the surface of a semiconductor wafer is provided with a washing unit including first, second and third nozzles installed within a load-cup where the loading and unloading of the wafers takes place. The first nozzles spray deionized water toward the top face of a pedestal on which the wafers are placed in the load cup, thereby washing contaminants off of the pedestal. The second nozzles spray deionized water toward a membrane provided at the bottom of a polishing head, thereby washing the membrane. The third nozzles spray deionized water through purge holes formed in a retainer ring of the polishing head toward a space formed between the outer surface of the membrane and the inner surface of the retainer ring. Consequently, contaminants induced into the space are washed away. The CMP apparatus also includes an exhaust unit having an outlet, an exhaust pump and an exhaust pipe connecting the outlet and the exhaust pump, for exhausting contaminants to the outside of the CMP apparatus through a protective cover thereof. The exhaust outlet is provided at the bottom of a side of the protective cover.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.