Method for epitaxial growth on a substrate
US6402836B1 · kind B1 · utility
7Cited by
6References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 25, 2000 |
| Grant date | Jun 11, 2002 |
| Priority date | — |
| Expiry date | Oct 25, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B29/38
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention concerns a method for epitaxial growth of a material on a first solid material from a material melting on the material, characterized in that it comprises: a step of growth of the first material on the substrate, made of a second material; a step whereby crystalline tips of the first material are made to grow from the contact surface between the first material and the melting material; a step which consists in causing crystals to grow laterally from the crystalline tips in a plane parallel to that of the free surface of the melting material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.