André Leycuras
3Patents
2h-index
—Co-inventors
24Inventor score
Filing activity: Oct 16, 2000 → May 5, 2004
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6402836B1 | Method for epitaxial growth on a substrate | Chemistry; Metallurgy | 7 | Expired |
| US6709520B1 | Reactor and method for chemical vapor deposition | Chemistry; Metallurgy | 7 | Expired |
| US7416606B2 | Method of forming a layer of silicon carbide on a silicon wafer | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.