Apparatus and method for a reliable return current path for sputtering processes
US6402902B1 · kind B1 · utility
1Cited by
9References
21Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 13, 1995 |
| Grant date | Jun 11, 2002 |
| Priority date | — |
| Expiry date | Feb 13, 2015 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3408
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for establishing and maintaining a reliable ground for reactive sputtering systems. A spatially extended high density plasma is generated in a large region surrounding the sputtering target. The plasma electrically connects the target to a part of the coating machine that is not subject to deposition of sputtered material from the target. The plasma is generated by an applicator which is independent of the target.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.