High purity, siliconized silicon carbide having high thermal shock resistance
US6403155B2 · kind B2 · utility
6Cited by
5References
9Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 21, 2000 |
| Grant date | Jun 11, 2002 |
| Priority date | — |
| Expiry date | Jan 8, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/30
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
This invention is a high strength, thermal shock resistant, high purity siliconized silicon carbide material made from siliconizing a converted graphite SiC body having at least 71 vol % silicon carbide therein.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.