Resist pattern formation method
US6403288B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 7, 2000 |
| Grant date | Jun 11, 2002 |
| Priority date | — |
| Expiry date | Mar 7, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/115
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of forming a resist pattern from a chemically amplified positive radiation sensitive resin composition.The film thickness of an unexposed portion of a resist film formed from the chemically amplified positive radiation sensitive resin composition after wet development is 100 to 400 å smaller than that before wet development. Alternatively, a resist film formed from the chemically amplified positive radiation sensitive resin composition is wet developed at both a temperature and a time enough to ensure that the film thickness of an unexposed portion of the resist film after wet development is 100 to 400 å smaller than that before wet development.A resist film which is formed from a chemically amplified positive radiation sensitive resin composition and experiences a 100 to 400 å reduction in the film thickness of an unexposed portion by wet development is useful as a resist film for forming a resist pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.