Method for making hyperfrequency transistor

US6403437B1 · kind B1 · utility

Assignees

• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR
• FRANCE TELECOM · FR

Inventors

• Alain Chantre · Seyssinet-Pariset, FR
• Jean Du Port De Poncharra · Saint-Égrève, FR

Key dates

• Filing date: Dec 29, 1999
• Grant date: Jun 11, 2002
• Expiry date: Dec 29, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D10/40

Abstract

A bipolar transistor including an extrinsic base on the surface of a silicon substrate covered by a first layer of doped polycrystalline silicon, an intrinsic base that is separated from the extrinsic base and covered by a second layer of polycrystalline silicon that constitutes the emitter and that is insulated from the first layer of polycrystalline silicon, and a link base that links the extrinsic base to the intrinsic base. The link base is located under the first layer of doped polycrystalline silicon.