Process for producing metal-containing layers

US6403473B1 · kind B1 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Sven Schmidbauer · Dresden, DE
• Alexander Ruf · Dresden, DE
• Oliver Gehring · Dresden, DE

Key dates

• Filing date: May 20, 1999
• Grant date: Jun 11, 2002
• Expiry date: May 20, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76856
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A process for producing metal-containing layers, in particular metal-containing diffusion barriers, contact layers and/or antireflection layers. The process according to the invention has a first step in which a metal layer having a predetermined thickness at an elevated temperature is applied to a semiconductor structure. Next, the metal layer is cooled in a nitrogen-containing atmosphere, resulting in a metal nitride layer being formed.