Fabrication method for semiconductor integrated device
US6403475B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2000 |
| Grant date | Jun 11, 2002 |
| Priority date | — |
| Expiry date | Jun 15, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/948
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Annealing technology is capable of heating a wafer on which a copper film is formed at a desired temperature within a short period of time. A light-shielding plate 106 of SiC (silicon carbide) exhibiting a flat emissivity irrespective of the wavelengths and emitting light over a wide band of wavelengths is interposed between the wafer 1 on which is formed a copper film having a high light reflection factor and lamps 102. The lamps 102 are turned on in this state so that the light-shielding plate 106 is heated, first, and, then, the wafer 1 is heated by light radiated from the light-shielding plate 106 that is heated, thereby to anneal the copper film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.