Method of controlling FSG deposition rate in an HDP reactor
US6403501B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 27, 2000 |
| Grant date | Jun 11, 2002 |
| Priority date | — |
| Expiry date | Dec 27, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided that conditions the chamber walls of a HDP CVD reactor by forming a layer of doped material prior to depositing dielectric layers of the doped material onto wafers. A consistent deposition rate can be maintained during subsequent deposition. When deposition is halted, the chamber is cleaned and a thin layer of the doped material is formed on the walls. Consequently, the chamber is kept at equilibrium even during periods of idle, thereby allowing the deposition rates to be consistent even after deposition resumes after the idle periods. For prolonged idle times, the chamber is re-cleaned and the doped material is re-deposited periodically, such as every 12 hours.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.