Semiconductor crystal, fabrication method thereof, and semiconductor device
US6403976B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2000 |
| Grant date | Jun 11, 2002 |
| Priority date | — |
| Expiry date | Jan 13, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8164
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Si1−xGex/Si1−yCy short-period superlattice which functions as a single SiGeC layer is formed by alternately growing Si1−xGex layers (0<x<1) and Si1−yCy layers (0<y<1) each having a thickness corresponding to several atomic layers which is small enough to prevent discrete quantization levels from being generated. This provides a SiGeC mixed crystal which is free from Ge—C bonds and has good crystalline quality and thermal stability. The Si1−xGex/Si1−yCy short-period superlattice is fabricated by a method in which Si1−xGex layers and Si1−yCy layers are epitaxially grown alternately, or a method in which a Si/Si1−xGex short-period superlattice is first formed and then C ions are implanted into the superlattice followed by annealing for allowing implanted C ions to migrate to Si layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.