Semi-insulating silicon carbide without vanadium domination
US6403982B2 · kind B2 · utility
41Cited by
12References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 10, 2001 |
| Grant date | Jun 11, 2002 |
| Priority date | — |
| Expiry date | Jan 10, 2021 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B33/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A semi-insulating bulk single crystal of silicon carbide is disclosed that has a resistivity of at least 5000 &OHgr;-cm at room temperature and a concentration of deep level trapping elements that is below the amounts that will affect the resistivity of the crystal, preferably below detectable levels. A method of forming the crystal is also disclosed, along with some resulting devices that take advantage of the microwave frequency capabilities of devices formed using substrates according to the invention.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.