Pedestal collar structure for higher charge retention time in trench-type DRAM cells

US6404000B1 · kind B1 · utility

Assignees

• International Business Machines Corporation · US
• Infineon Technologies North America Corp. · US
• Kabushiki Kaisha Toshiba · JP

Inventors

• Rama Divakaruni · Ossining, US
• Rajarao Jammy · Hopewell Junction, US
• Byeong Y. Kim · Lagrangeville, US
• Jack A. Mandelman · Stormville, US
• Akira Sudo · Poughkeepsie, US
• Dirk Tobben · Fishkill, US

Key dates

• Filing date: Jun 22, 2000
• Grant date: Jun 11, 2002
• Expiry date: Jul 9, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B12/0385

Abstract

A memory structure having a trenched formed in a substrate. A collar oxide is located in an upper portion of the trench and includes a pedestal portion. A method of forming a memory device having a collar oxide with pedestal collar is also disclosed.