Insulated gate bipolar transistor
US6404037B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 27, 1998 |
| Grant date | Jun 11, 2002 |
| Priority date | — |
| Expiry date | Oct 27, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/53
Abstract
An insulated gate bipolar transistor having a collector electrode 3, an emitter region 6 and a base region 4 formed between the collector electrode and the emitter region, further including a channel stop region 17 spaced from the emitter region and electrically connected to the collector electrode. The base region 4 includes a first region 4c between the emitter region and the channel stop region and a second region between the first region and the collector electrode, the first region having a higher minority-carrier-lifetime than the second region, whereby the first region provides a conductivity modulated conduction path between the emitter region and the channel stop region when the insulated gate bipolar transistor is reverse biased.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.