Commonly housed diverse semiconductor
US6404050B2 · kind B2 · utility
20Cited by
15References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 1, 2001 |
| Grant date | Jun 11, 2002 |
| Priority date | — |
| Expiry date | Oct 1, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/901
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOSFET die and a Schottky diode die are mounted on a common lead frame pad and their drain and cathode, respectively, are connected together at the pad. The pad has a plurality of pins extending from one side thereof. The lead frame has insulated pins on its opposite side which are connected to the FET source, the FET gate and the Schottky diode anode respectively by wire bonds. The lead frame and die are molded in an insulated housing and the lead frame pins are bent downwardly to define a surface-mount package.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.