Grinding method, semiconductor device and method of manufacturing semiconductor device
US6406357B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 9, 2000 |
| Grant date | Jun 18, 2002 |
| Priority date | — |
| Expiry date | Mar 9, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6838
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A surface of a wafer (semiconductor substrate) is subjected to grinding by rotating it and bringing it into contact with a rotating grinding wheel. The grinding wheel is rotated in a first direction at a rotating speed N1. The wafer is rotated in a second direction which is opposite to the first direction at a rotating speed N2, wherein a value of N2/N1 is in the range of 0.006 to 0.025. The wafer is then carried from the grinding process to a dicing process while being maintained in a horizontal position by using a wafer handling jig to prevent the breakage of the wafer. A flash etching process may also be used at the end of the grinding process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.