Semiconductor workpiece processing apparatus and method
US6406545B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 27, 1999 |
| Grant date | Jun 18, 2002 |
| Priority date | — |
| Expiry date | Jul 27, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6831
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wafer processing apparatus includes a processing chamber, a chuck arranged in the processing chamber for supporting a wafer, and a pedestal which is spaced apart from the chuck. A first gas layer is provided between the chuck and the wafer and a second gas layer is provided in the space between the pedestal and the chuck. The pressure of the first gas layer is controlled to be in a pressure range in which a thermal conductivity of the first gas layer is substantially constant with respect to changes in pressure of the first gas layer and the pressure of the second gas layer is controlled so as to control an amount of heat transferred to/from the pedestal.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.