Nickel-silicide formation by electroless Ni deposition on polysilicon
US6406743B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 10, 1997 |
| Grant date | Jun 18, 2002 |
| Priority date | — |
| Expiry date | Jan 24, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/288
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The present invention provides a method of manufacturing a nickel-silicide technology for polysilicon interconnects. Nickel 40 is deposited on polysilicon 30 using a electroless process. Using a rapid thermal anneal process, Ni 40 is transformed to NiSi at about 600° C. without any agglomeration. The method comprises forming a polysilicon layer 30 over a substrate 10. The surface 34 of the polysilicon layer is activated. Nickel 40 is selectively electroless deposited onto the surface of the polysilicon layer forming a Nickel layer over the polysilicon layer. The Ni layer 40 is rapidly thermally annealed forming a Nickel silicide layer 36 over the polysilicon layer 30. The rapid thermal anneal is performed at a temperature of about 600° C. for a time of about 40 sec. The Nickel silicide layer 36 preferably comprises NiSi 36B with a low resistivity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.