Method of manufacturing photomasks by plasma etching with resist stripped
US6406818B1 · kind B1 · utility
11Cited by
8References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 1999 |
| Grant date | Jun 18, 2002 |
| Priority date | — |
| Expiry date | Mar 31, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F1/80
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for adjusting out of tolerance critical dimensions of an under processed photomask to be within predetermined defined limits after the photosensistive resist material has been removed from the exposed photomask. The method includes measuring the critical dimensions of the opaque material of the under processed photomask after the photosensitive resist material has been removed, and exposing the photomask to electrified plasma gases for removing excess opaque material without degrading the reflectivity of the photomask beyond specified limits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.