Positive photoresist composition and process for forming resist pattern
US6406827B2 · kind B2 · utility
3Cited by
6References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 28, 1999 |
| Grant date | Jun 18, 2002 |
| Priority date | — |
| Expiry date | May 28, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0226
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A positive photoresist composition includes (A) an alkali-soluble resin, (B) a quinonediazide ester of, e.g., bis[2,5-dimethyl-3-(2-hydroxy-5-methylbenzyl)-4-hydroxyphenyl]methane and/or 2,4-bis[4-hydroxy-3-(4-hydroxybenzyl)-5-methylbenzyl]-6-cyclohexylphenol, and (C) 4,4′-bis(diethylamino)benzophenone. The composition exhibits high sensitivity and definition and improved focal depth range properties and underexposure margin.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.