Pattern-sensitive deposition for damascene processing
US6406995B1 · kind B1 · utility
43Cited by
8References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1999 |
| Grant date | Jun 18, 2002 |
| Priority date | — |
| Expiry date | Jun 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76835
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming an interconnection including the steps of forming a sacrificial material that comprises a physical property that is generally insensitive to a photo-reaction in a via through a dielectric material to a masking material over a conductive material. The method also includes forming a trench over in the dielectric material over the via and removing the sacrificial material from the via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.