Method to solve the delamination of a silicon nitride layer from an underlying spin on glass layer
US6407007B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 17, 1998 |
| Grant date | Jun 18, 2002 |
| Priority date | — |
| Expiry date | Nov 17, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for improving the adhesion of a thick silicon nitride layer, to an underlying spin on glass, (SOG), layer, has been developed. After applying, baking and curing of a SOG layer, plasma treatment of the SOG layer, is performed in a deposition tool, using a nitrous oxide plasma. The plasma treatment prepares the exposed SOG surface for an in situ deposition of a thick silicon nitride layer, by improving the adhesion of thick silicon nitride to the underlying SOG layer, and by decreasing the possibility of silicon nitride delamination, that can occur with counterparts, fabricated without the nitrous oxide plasma treatment of the SOG layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.