Soft plasma oxidizing plasma method for forming carbon doped silicon containing dielectric layer with enhanced adhesive properties
US6407013B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 16, 2001 |
| Grant date | Jun 18, 2002 |
| Priority date | — |
| Expiry date | Jan 16, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76829
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Within a method for forming a dielectric layer within a microelectronic fabrication there is first provided a substrate. There is then formed over the substrate a carbon doped silicon containing dielectric layer. There is then treated the carbon doped silicon containing dielectric layer with an oxidizing plasma to form from the carbon doped silicon containing dielectric layer an oxidizing plasma treated carbon doped silicon containing dielectric layer. By treating the carbon doped silicon containing dielectric layer with the oxidizing plasma, particularly under mild conditions, to form therefrom the oxidizing plasma treated carbon doped silicon containing dielectric layer, adhesion of an additional microelectronic layer upon the oxidizing plasma treated carbon doped silicon containing dielectric layer is enhanced in comparison with adhesion of the additional microelectronic layer upon the carbon doped silicon containing dielectric layer, while not compromising dielectric properties of the carbon doped silicon containing dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.