Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices
US6407014B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Dec 16, 1999 |
| Grant date | Jun 18, 2002 |
| Priority date | — |
| Expiry date | Dec 16, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/969
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a method for the production of high quality thermally grown oxide on top of silicon carbide. The high quality oxide is obtained by selectively removing the carbon from the silicon carbide in the areas where oxide formation is desired or required. The method includes the steps of:(a) amorphizing the silicon carbide in at least one region of a monocrystalline silicon carbide substrate by ion implantation;(b) removing at least an effective amount of the carbon resulting from amorphizing the silicon carbide with an etchant effective to selectively remove carbon from the amorphized silicon carbide to produce an amorphous silicon-rich region; and(c) forming an oxide on the etched surface to provide a device which has an oxide region on(1) either an amorphous silicon-rich region which is (i) predominantly or entirely amorphous silicon or (ii) a mixture of predominantly amorphous silicon in combination with minor amounts of amorphous silicon carbide and /or silicon dioxide or(2) a monocrystalline silicon region;wherein (1) or (2) is present on a region of a silicon carbide substrate, or(3) a region of a silicon carbide substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.