p-Type group II-VI compound semiconductor crystals growth method for such crystals, and semiconductor device made of such crystals
US6407405B1 · kind B1 · utility
15Cited by
2References
15Claims
0Family size
Assignees
Inventors
Key dates
| Filing date | May 18, 2000 |
| Grant date | Jun 18, 2002 |
| Priority date | — |
| Expiry date | May 18, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of growing p-type group II-VI compound semiconductor crystals, includes a step of forming ZnO layers and ZnTe layers alternately on a ZnO substrate, the ZnO layer being not doped with impurities and having a predetermined impurity concentration, and the ZnTe layer being doped with p-type impurities N to a predetermined impurity concentration or higher.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.