Programmable neuron MOSFET on SOI

US6407425B1 · kind B1 · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Jeffrey A. Babcock · Neufahrn, DE
• Scott Balster · Dallas, US
• Gregory E. Howard · Dallas, US
• Angelo Pinto · Augusta, IT
• Philipp Steinmann · Richardson, US

Key dates

• Filing date: Sep 14, 2001
• Grant date: Jun 18, 2002
• Expiry date: Sep 14, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

The instant invention describes a programmable neuron MOSFET structure formed on SOI substrates. A number of input capacitor structures (241, 231) are formed on a SOI substrate. The substrate region of the capacitors (330, 340) are completely isolated from each other by isolation structures (270). In addition the transistor structure (210) of the neuron MOSFET is completely isolated from the capacitor structures (241, 231) by the isolation structure (270). The neuron MOSFET also comprises a contiguous floating conductive layer (200, 230, and 240) which forms the gate structure of the capacitors (230, 240) and the floating gate (200) of the transistor structure.