MOSFET-based electrostatic discharge (ESD) protection structure with a floating heat sink
US6407445B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2000 |
| Grant date | Jun 18, 2002 |
| Priority date | — |
| Expiry date | Oct 6, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A MOSFET-based ESD protection structure for use in MOS ICs that is relatively immune to thermal overheating during an ESD event. This immunity is achieved by employing a floating heat sink to dissipate heat generation during the ESD event. The structure includes a semiconductor substrate (e.g., a silicon substrate) of a first conductivity type (typically P-type) with a gate insulation layer (e.g., a gate silicon dioxide layer) thereon. A patterned gate layer (e.g., a patterned polysilicon gate layer) overlies the gate insulation layer. Also included are source and drain regions of a second conductivity type disposed in the semiconductor substrate. The structure further includes a floating heat sink disposed above, and in contact with, the drain region, and an interconnect dielectric layer disposed over the semiconductor substrate, the source region, the patterned gate layer and the drain region. The floating heat sink is formed of a material with a heat capacity and/or thermal conductivity that is greater than the heat capacity and/or, thermal conductivity of the material (typically SiO2-based) which constitutes the interconnect dielectric layer. For example, the floating heat sink…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.