Method of forming conducting diffusion barriers
US6410383B1 · kind B1 · utility
Assignee
Inventor
Key dates
| Filing date | Mar 16, 2000 |
| Grant date | Jun 25, 2002 |
| Priority date | — |
| Expiry date | Mar 16, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76864
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming conducting diffusion barriers by depositing an initial film and implanting ions to modify the film is provided. An initial film having good step coverage is deposited over a semiconductor substrate. The initial material need not have the desired properties for a conducting diffusion barrier, but preferably contains one or more elements to be used in forming a desired film with the appropriate properties. The initial material is deposited by CVD, PECVD or IMP deposition. Ions are preferably implanted using plasma immersion ion implantation (PIII), although other methods are also provided. The method of the present invention produces binary, ternary, quaternary and other more complex films, while providing adequate step coverage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.