Yanjun Ma
84Patents
18h-index
117Co-inventors
87Inventor score
Filing activity: Apr 30, 1998 → Mar 14, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6627503B2 | Method of forming a multilayer dielectric stack | Electricity | 649 | Expired |
| US6297539A | Doped zirconia, or zirconia-like, dielectric film transistor structure and deposition method for same | Electricity | 604 | Expired |
| US6407435B1 | Multilayer dielectric stack and method | Electricity | 278 | Expired |
| US6060755A | Aluminum-doped zirconium dielectric film transistor structure and deposition method for same | Electricity | 159 | Expired |
| US6207589A | Method of forming a doped metal oxide dielectric film | Electricity | 100 | Expired |
| US6441417B1 | Single c-axis PGO thin film on ZrO2 for non-volatile memory applications and methods of making the same | Electricity | 77 | Expired |
| US6200866A | Use of silicon germanium and other alloys as the replacement gate for the fabrication of MOSFET | Electricity | 70 | Expired |
| US6950342B2 | Differential floating gate nonvolatile memories | Physics | 65 | Expired |
| US6573134B2 | Dual metal gate CMOS devices and method for making the same | Electricity | 62 | Expired |
| US6348373B1 | Method for improving electrical properties of high dielectric constant films | Electricity | 49 | Expired |
| US6620664B2 | Silicon-germanium MOSFET with deposited gate dielectric and metal gate electrode and method for making the same | Electricity | 46 | Expired |
| US6184110A | Method of forming nitrogen implanted ultrathin gate oxide for dual gate CMOS devices | Electricity | 41 | Expired |
| US7482251B1 | Etch before grind for semiconductor die singulation | Electricity | 35 | Active |
| US6403453B1 | Dose control technique for plasma doping in ultra-shallow junction formations | Electricity | 35 | Expired |
| US8188927B1 | RFID tag assembly methods | Emerging Cross-Sectional Technologies | 28 | Active |
| US7679957B2 | Redundant non-volatile memory cell | Physics | 28 | Active |
| US9349440B1 | Non-volatile SRAM with multiple storage states | Physics | 20 | Active |
| US7843032B1 | Radio frequency identification device electrostatic discharge management | Electricity | 20 | Active |
| US8661652B1 | RFID tag assembly methods | Emerging Cross-Sectional Technologies | 16 | Active |
| US6410383B1 | Method of forming conducting diffusion barriers | Electricity | 14 | Expired |
| US9317799B1 | RFID tag assembly methods | Emerging Cross-Sectional Technologies | 12 | Active |
| US6759695B2 | Integrated circuit metal oxide semiconductor transistor | Electricity | 11 | Expired |
| US7808823B2 | RFID tag with redundant non-volatile memory cell | Physics | 11 | Active |
| US10116033B1 | RFID tag assembly methods | Emerging Cross-Sectional Technologies | 8 | Active |
| US11024936B1 | RFID tag assembly methods | Emerging Cross-Sectional Technologies | 7 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.