Semiconductor device with anti-reflective structure and methods of manufacture
US6410421B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2000 |
| Grant date | Jun 25, 2002 |
| Priority date | — |
| Expiry date | Apr 28, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor devices includes an anti-reflective structure for use in patterning metal layers in semiconductor devices. The anti-reflective structure is made, at least in part, using indium tin oxide. The anti-reflective structure is especially useful for patterning the metal layers with light having a wavelength of 190-300 nm. The anti-reflective structure may be a single indium tin oxide layer or may include a titanium nitride layer formed over the metal layer and an indium tin oxide layer formed over the titanium nitride layer. For many applications, the anti-reflective structure, in the presence of a photoresist layer, has a reflectivity of about 3% or less for light having a wavelength of 190-300 nm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.