Technology for thermodynamically stable contacts for binary wide band gap semiconductors
US6410460B1 · kind B1 · utility
18Cited by
1References
13Claims
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Key dates
| Filing date | May 15, 2000 |
| Grant date | Jun 25, 2002 |
| Priority date | — |
| Expiry date | May 15, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8325
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A thermodynamically stable metallic contact for binary oxide-, nitride-, carbide or phosphide-semiconductors and a method of its preparation, the contact is formed in a high temperature reaction in vacuum of a metal bi-layer with the binary semiconductor substrate. With a proper choice of the two metallic layers, each metal forms a single phase with only one of binary semiconductor elements. The resulting phases form distinct layers in a thermodynamically stable sequence.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.