Trilayer seed layer structure for spin valve sensor
US6411476B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 28, 1999 |
| Grant date | Jun 25, 2002 |
| Priority date | — |
| Expiry date | Oct 28, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01F10/3295
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A trilayer seed layer structure is employed between a first read gap layer and a spin valve sensor for improving the magnetic and giant magnetoresistive properties and the thermal stability. In the spin valve sensor, the trilayer seed layer structure is located between a first read gap layer and a ferromagnetic free layer. The antiferromagnetic pinning layer is preferably nickel manganese (Ni—Mn). The trilayer seed layer structure includes a first seed layer that is a first metallic oxide, a second seed layer that is a second metallic oxide and a third seed layer that is a nonmagnetic metal. A preferred embodiment is a first seed layer of nickel oxide (NiO), a second seed layer of nickel manganese oxide (NiMnOx), and a third seed layer of copper (Cu).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.