Structure and method for fabrication of an improved capacitor
US6411492B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 24, 2000 |
| Grant date | Jun 25, 2002 |
| Priority date | — |
| Expiry date | May 24, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Structure and method for fabrication of an improved capacitor are disclosed. In one embodiment, the disclosed capacitor includes a metal column comprising a number of interconnect metal segments and a number of via metal segments stacked on one another. The metal column constitutes one electrode of the capacitor. Another electrode of the capacitor is a metal wall surrounding the metal column. In one embodiment, the metal wall is fabricated from a number of interconnect metal structures and a number of via metal structures stacked on one another. In one embodiment, the metal wall is shaped as a hexagon. In this embodiment, a tight packing arrangement is achieved by packing individual hexagonal capacitors “wall to wall” so as to achieve a cluster of individual hexagonal capacitors. The cluster of individual capacitors acts as a single composite capacitor. In one embodiment, the interconnect metal and via metal are both made of copper. In another embodiment, the interconnect metal is made of copper while the via metal is made of tungsten.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.