Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment
US6413147B1 · kind B1 · utility
12Cited by
39References
15Claims
0Family size
Inventor
Key dates
| Filing date | Feb 14, 2000 |
| Grant date | Jul 2, 2002 |
| Priority date | — |
| Expiry date | Feb 14, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67253
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
In a process of selectively removing material from an exposed layer carried by a substrate, a technique for determining endpoint by monitoring the intensity of a radiation beam that is passed through the substrate and any intervening layers to be reflected off the layer being processed. This monitoring technique is used during photoresist developing, wet etching, and mechanical planarization and polishing during the manufacture of integrated circuits on semiconductor wafers, flat panel displays on glass substrates and similar articles. Planarization and polishing processes are alternatively monitored by monitoring temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.