Semiconductor device having silicide films on a gate electrode and a diffusion layer and manufacturing method thereof
US6413807B1 · kind B1 · utility
5Cited by
1References
15Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 2, 2000 |
| Grant date | Jul 2, 2002 |
| Priority date | — |
| Expiry date | Jun 2, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0213
Abstract
Silicide films having a high heat-resistance are formed on a gate electrode, simultaneously with silicide films having good junction leakage characteristics on diffusion layers. A transistor includes a polycrystalline silicon gate electrode, a gate insulating film, a diffusion layer, and sidewalls on a silicon substrate isolated by an element isolation oxide film. A first silicide film and a second silicide film are formed on the gate electrode and on the diffusion layer, respectively. The first silicide film is thicker than the second silicide film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.