Method for producing silicon nitride series film
US6413887B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2000 |
| Grant date | Jul 2, 2002 |
| Priority date | — |
| Expiry date | Sep 21, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/909
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for producing a plasma silicon nitride series film with a small heat load having a low hydrogen concentration is provided. The method is for producing a silicon nitride series film on a material to be treated using a plasma CVD apparatus having a reaction chamber evacuated to vacuum. The method comprises the steps of introducing a monosilane gas (SiH4) and a nitrogen gas (N2) as raw material gases into the reaction chamber at prescribed flow rates, and heating the material to be treated to a prescribed temperature. At this time, it is characterized in that the flow rate of the nitrogen gas is at least 100 times the flow rate of the monosilane gas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.