Onium salts, photoacid generators, resist compositions, and patterning process
US6416928B1 · kind B1 · utility
16Cited by
7References
18Claims
0Family size
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Key dates
| Filing date | Oct 5, 2000 |
| Grant date | Jul 9, 2002 |
| Priority date | — |
| Expiry date | Jan 13, 2021 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/122
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Onium salts of substituted phenylmethylbenzene-sulfonate anions with iodonium or sulfonium cations are novel. A chemically amplified resist composition comprising the onium salt as a photoacid generator is suited for microfabrication, especially by deep UV lithography because of many advantages including improved resolution, minimized line width variation or shape degradation even on long-term PED, minimized defect after coating, development and peeling, and improved pattern profile after development.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.