Method of manufacturing a capacitor in a semiconductor device
US6417042B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 8, 2001 |
| Grant date | Jul 9, 2002 |
| Priority date | — |
| Expiry date | Feb 8, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/03
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
There is disclosed a method of manufacturing a capacitor in a semiconductor device. In a Ta2O5 capacitor using a Ru lower electrode, the method processes the Ru lower electrode at low temperature before a Ta2O5 film of a dielectric film is deposited, so that Ru crystal particles are filled with oxygen atoms to form a good quality RuO2. Therefore, the disclosed method can prevent a lift phenomenon of a thin film by prohibiting a stress of the Ta2O5 dielectric film due to RuO2 generated between the Ta2O5 dielectric film and the Ru lower electrode during the deposition process of a Ta2O5 dielectric and a subsequent annealing process. Also, the disclosed method can prevent diffusion of oxygen atoms and oxidization of a TiN film underlying the Ru film from the Ta2O5 dielectric film. As a result, the method can improve leakage current and electrical characteristics of a capacitor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.