Post etch cleaning composition and process for dual damascene system
US6417112B1 · kind B1 · utility
29Cited by
7References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1999 |
| Grant date | Jul 9, 2002 |
| Priority date | — |
| Expiry date | Jun 30, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/963
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A new cleaning chemistry based on a choline compound, such as choline hydroxide, is provided in order to address the problem of dual damascene fabrication. An etch stop inorganic layer at the bottom of a dual damascene structure protects the underlying interconnect of copper and allows a better cleaning. A two step etch process utilizing the etch stop layer is used to achieve the requirements of UISI manufacturing in a dual damascene structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.