Spin-dependent tunneling sensor suitable for a magnetic memory
US6418048B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 2, 2001 |
| Grant date | Jul 9, 2002 |
| Priority date | — |
| Expiry date | Oct 2, 2021 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/15
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and system for providing a top pinned spin-dependent tunneling sensor is disclosed. The method and system include providing a free layer, a tunneling barrier, a synthetic pinned layer and an antiferromagnetic layer. The free layer is ferromagnetic. The tunneling barrier is an insulator. The tunneling barrier is disposed between the free layer and the synthetic pinned layer. The synthetic pinned layer is ferromagnetic and includes a ferromagnetic top layer. The synthetic pinned layer is between the tunneling barrier and the antiferromagnetic layer. The ferromagnetic top layer acts as a seed layer for the antiferromagnetic layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.