Inventor · Palo Alto, CA, US

Kyusik Sin

45Patents
44h-index
39Co-inventors
81Inventor score

Filing activity: Aug 31, 1999 → May 27, 2011

Most-cited inventions

PatentTitleAreaCited byStatus
US6809899B1 Magnetic heads for perpendicular recording with trapezoidal pole tips Emerging Cross-Sectional Technologies 231 Expired
US6353318B1 Magnetoresistive sensor having hard biased current perpendicular to the plane sensor Physics 203 Expired
US7444740B1 Damascene process for fabricating poles in recording heads Emerging Cross-Sectional Technologies 186 Expired
US6418048B1 Spin-dependent tunneling sensor suitable for a magnetic memory Physics 177 Expired
US7522377B1 Magnetic write head with high moment magnetic thin film formed over seed layer Emerging Cross-Sectional Technologies 174 Active
US6803615B1 Magnetic tunnel junction MRAM with improved stability Electricity 169 Expired
US6700759B1 Narrow track width magnetoresistive sensor and method of making Emerging Cross-Sectional Technologies 168 Expired
US7239478B1 Write element for perpendicular recording in a data storage system Physics 167 Expired
US6404601B1 Merged write head with magnetically isolated poletip Physics 167 Expired
US7296339B1 Method for manufacturing a perpendicular magnetic recording head Emerging Cross-Sectional Technologies 165 Expired
US7177117B1 Magnetically soft, high saturation magnetization laminates of iron-cobalt-nitrogen and iron-nickel for magnetic head pole layers Emerging Cross-Sectional Technologies 164 Expired
US6707083B1 Magnetic tunneling junction with improved power consumption Electricity 161 Expired
US7248431B1 Method of fabricating a perpendicular recording write head having a gap with two portions Emerging Cross-Sectional Technologies 160 Expired
US6639291B1 Spin dependent tunneling barriers doped with magnetic particles Electricity 160 Expired
US7911737B1 Method and system for providing a PMR head having an antiferromagnetically coupled pole Physics 160 Active
US7354664B1 Magnetically soft, high saturation magnetization laminate of iron-cobalt-nitrogen and iron-nickel for perpendicular media underlayers Emerging Cross-Sectional Technologies 159 Expired
US7911735B1 Perpendicular magnetic recording head utilizing a nonmagnetic underlayer layer Emerging Cross-Sectional Technologies 158 Active
US6661625B1 Spin-dependent tunneling sensor with low resistance metal oxide tunnel barrier Physics 157 Expired
US7012832B1 Magnetic memory cell with plural read transistors Physics 157 Expired
US8018677B1 Magnetic recording head formed by damascene process Emerging Cross-Sectional Technologies 157 Active
US6430806B1 Method for manufacturing an inductive write element employing bi-layer photoresist to define a thin high moment pole pedestal Emerging Cross-Sectional Technologies 155 Expired
US6747301B1 Spin dependent tunneling barriers formed with a magnetic alloy Electricity 154 Expired
US6744608B1 Method and system for making TMR junctions Physics 154 Expired
US6888184B1 Shielded magnetic ram cells Electricity 154 Expired
US7134185B1 Method of making narrow track width magnetoresistive sensor Emerging Cross-Sectional Technologies 154 Expired

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.